English 
SC-3GA-4
YIM
| Quantity: | |
|---|---|
32% Triple Junction GaAs Solar Cell (40cm×80cm)
This cell type is an GaInP2/GaAs/Ge on Ge substrate triple junction solar cell (efficiency class 32%). The solar cell has an active area of 30 cm2 .
The solar cell assembly is equipped with an discrete Si bypass diode, interconnectors and cover glass.
Triple-junction GaAs Solar Array
Features
Triple-junction GaAs Solar Array is consiste Triple-junction GaAs Solar Array or solar panels in a certain way of electrical assembly.Characteristics is high output power,high strong anti-radiation capacity,wide application range.
Applications
LEO,MEO,GEO and explorations of the spacecraft
Flight experience
satellites of SJ series ,satellites of GY series.
Each product we will provide a rigorous test report.
32% Triple Junction GaAs Solar Cell Assembly
This cell type is an GaInP2/GaAs/Ge on Ge substrate triple junction solar cell assembly (efficiency class 32%). The solar cell assembly is equipped with an discrete Si bypass diode, interconnectors and cover glass.
1. Design and Mechanical Data
Base Material | GaInP2/GaAs/Ge on Ge substrate |
AR-coating | TiOX/Al2O3 |
Dimensions | (60.15±0.05)mm×(40.15±0.05)mm |
Cell Area | 24.00cm2 |
Weight | 2.025g |
Thickness | 0.161mm |
Coverglass | KFB 120 |
Coverglass thickness | 120±20μm |
Interconnectors(3× front side/1× diode) | Ag |
Interconnector thickness | 17μm |
2. Typical Electrical Parameters (SCA)
Average Open Circuit Voc (mV) | 2650 |
Average Short Circuit Jsc (mA/cm2) | 19.1 |
Voltage @ Max. PowerVm (mV) | 2350 |
Current @ Max. PowerJm (mA/cm2) | 18.45 |
Average Efficiency ηbare (1353W/m2) | 32% |
Average Fill Factor | 0.850 |
Standard：AM0, 1sun, 1353W/m2, 25℃.
3. Radiation Degradation ( Fluence 1MeV )
Parameters | 1×1015e/cm2 |
Im/Im0 | 0.95 |
Vm/Vm0 | 0.88 |
Pm/Pm0 | 0.84 |
4. Acceptance Values (SCA )
Voltage VL | 2200mV |
Min. average current IL min @ VL | 540mA |
Min. individual current IL ave @ VL | 520mA |
5. Shadow Protection(Discrete bypass diode)
Vforward(620mA) | ≤1.0V |
Ireverse(4.0V) | ≤0.2mA |
6. Temperature Coefficients (20℃～65℃)
Parameters | BOL | 1 MeV, 5×1014e/cm2 | 1 MeV, 1×1015e/cm2 | |
Jsc (μA/cm2/℃) | 11.0 | 10.0 | 13.0 | |
Voc (mV/℃) | -5.9 | -6.1 | -6.3 | |
Jm (μA/cm2/℃) | 9.0 | 9.5 | 15.0 | |
Vm (mV/℃) | -6.0 | -6.2 | -6.5 |
7. Threshold Values
Absorptivity | ≤ 0.92 | |
Pull Test(at 45°) | ≥0.83N/mm2 | |
Status | Qualified |
32% Triple Junction GaAs Solar Cell (40cm×80cm)
This cell type is an GaInP2/GaAs/Ge on Ge substrate triple junction solar cell (efficiency class 32%). The solar cell has an active area of 30 cm2 .
The solar cell assembly is equipped with an discrete Si bypass diode, interconnectors and cover glass.
Triple-junction GaAs Solar Array
Features
Triple-junction GaAs Solar Array is consiste Triple-junction GaAs Solar Array or solar panels in a certain way of electrical assembly.Characteristics is high output power,high strong anti-radiation capacity,wide application range.
Applications
LEO,MEO,GEO and explorations of the spacecraft
Flight experience
satellites of SJ series ,satellites of GY series.
Each product we will provide a rigorous test report.
32% Triple Junction GaAs Solar Cell Assembly
This cell type is an GaInP2/GaAs/Ge on Ge substrate triple junction solar cell assembly (efficiency class 32%). The solar cell assembly is equipped with an discrete Si bypass diode, interconnectors and cover glass.
1. Design and Mechanical Data
Base Material | GaInP2/GaAs/Ge on Ge substrate |
AR-coating | TiOX/Al2O3 |
Dimensions | (60.15±0.05)mm×(40.15±0.05)mm |
Cell Area | 24.00cm2 |
Weight | 2.025g |
Thickness | 0.161mm |
Coverglass | KFB 120 |
Coverglass thickness | 120±20μm |
Interconnectors(3× front side/1× diode) | Ag |
Interconnector thickness | 17μm |
2. Typical Electrical Parameters (SCA)
Average Open Circuit Voc (mV) | 2650 |
Average Short Circuit Jsc (mA/cm2) | 19.1 |
Voltage @ Max. PowerVm (mV) | 2350 |
Current @ Max. PowerJm (mA/cm2) | 18.45 |
Average Efficiency ηbare (1353W/m2) | 32% |
Average Fill Factor | 0.850 |
Standard：AM0, 1sun, 1353W/m2, 25℃.
3. Radiation Degradation ( Fluence 1MeV )
Parameters | 1×1015e/cm2 |
Im/Im0 | 0.95 |
Vm/Vm0 | 0.88 |
Pm/Pm0 | 0.84 |
4. Acceptance Values (SCA )
Voltage VL | 2200mV |
Min. average current IL min @ VL | 540mA |
Min. individual current IL ave @ VL | 520mA |
5. Shadow Protection(Discrete bypass diode)
Vforward(620mA) | ≤1.0V |
Ireverse(4.0V) | ≤0.2mA |
6. Temperature Coefficients (20℃～65℃)
Parameters | BOL | 1 MeV, 5×1014e/cm2 | 1 MeV, 1×1015e/cm2 | |
Jsc (μA/cm2/℃) | 11.0 | 10.0 | 13.0 | |
Voc (mV/℃) | -5.9 | -6.1 | -6.3 | |
Jm (μA/cm2/℃) | 9.0 | 9.5 | 15.0 | |
Vm (mV/℃) | -6.0 | -6.2 | -6.5 |
7. Threshold Values
Absorptivity | ≤ 0.92 | |
Pull Test(at 45°) | ≥0.83N/mm2 | |
Status | Qualified |
