SC-3GA-4
YIM
| Quantity: | |
|---|---|
32% Triple Junction GaAs Solar Cell (40cm×80cm)
This cell type is an GaInP2/GaAs/Ge on Ge substrate triple junction solar cell (efficiency class 32%). The solar cell has an active area of 30 cm2 .
The solar cell assembly is equipped with an discrete Si bypass diode, interconnectors and cover glass.
Triple-junction GaAs Solar Array
Features
Triple-junction GaAs Solar Array is consiste Triple-junction GaAs Solar Array or solar panels in a certain way of electrical assembly.Characteristics is high output power,high strong anti-radiation capacity,wide application range.
Applications
LEO,MEO,GEO and explorations of the spacecraft
Flight experience
satellites of SJ series ,satellites of GY series.
Each product we will provide a rigorous test report.
Used for space solar system projects and space solar power systems, space grade solar cells, and excellent space engineers solar panels.
32% Triple Junction GaAs Solar Cell Assembly
This cell type is an GaInP2/GaAs/Ge on Ge substrate triple junction solar cell assembly (efficiency class 32%). The solar cell assembly is equipped with an discrete Si bypass diode, interconnectors and cover glass.
1. Design and Mechanical Data
Base Material |
GaInP2/GaAs/Ge on Ge substrate |
AR-coating |
TiOX/Al2O3 |
Dimensions |
(80.15±0.05)mm×(40.15±0.05)mm |
Cell Area |
24.00cm2 |
Weight |
2.025g |
Thickness |
0.161mm |
Coverglass |
KFB 120 |
Coverglass thickness |
120±20μm |
Interconnectors(3× front side/1× diode) |
Ag |
Interconnector thickness |
17μm |
2. Typical Electrical Parameters (SCA)
Average Open Circuit Voc (mV) |
2650 |
Average Short Circuit Jsc (mA/cm2) |
19.1 |
Voltage @ Max. PowerVm (mV) |
2350 |
Current @ Max. PowerJm (mA/cm2) |
18.45 |
Average Efficiency ηbare (1353W/m2) |
32% |
Average Fill Factor |
0.850 |
Standard：AM0, 1sun, 1353W/m2, 25℃.
3. Radiation Degradation ( Fluence 1MeV )
Parameters |
1×1015e/cm2 |
Im/Im0 |
0.95 |
Vm/Vm0 |
0.88 |
Pm/Pm0 |
0.84 |
4. Acceptance Values (SCA )
Voltage VL |
2200mV |
Min. average current IL min @ VL |
540mA |
Min. individual current IL ave @ VL |
520mA |
5. Shadow Protection(Discrete bypass diode)
Vforward(620mA) |
≤1.0V |
Ireverse(4.0V) |
≤0.2mA |
6. Temperature Coefficients (20℃～65℃)
Parameters |
BOL |
1 MeV, 5×1014e/cm2 |
1 MeV, 1×1015e/cm2 |
|
Jsc (μA/cm2/℃) |
11.0 |
10.0 |
13.0 |
|
Voc (mV/℃) |
-5.9 |
-6.1 |
-6.3 |
|
Jm (μA/cm2/℃) |
9.0 |
9.5 |
15.0 |
|
Vm (mV/℃) |
-6.0 |
-6.2 |
-6.5 |
7. Threshold Values
Absorptivity |
≤ 0.92 |
|
Pull Test(at 45°) |
≥0.83N/mm2 |
|
Status |
Qualified |
32% Triple Junction GaAs Solar Cell (40cm×80cm)
This cell type is an GaInP2/GaAs/Ge on Ge substrate triple junction solar cell (efficiency class 32%). The solar cell has an active area of 30 cm2 .
The solar cell assembly is equipped with an discrete Si bypass diode, interconnectors and cover glass.
Triple-junction GaAs Solar Array
Features
Triple-junction GaAs Solar Array is consiste Triple-junction GaAs Solar Array or solar panels in a certain way of electrical assembly.Characteristics is high output power,high strong anti-radiation capacity,wide application range.
Applications
LEO,MEO,GEO and explorations of the spacecraft
Flight experience
satellites of SJ series ,satellites of GY series.
Each product we will provide a rigorous test report.
Used for space solar system projects and space solar power systems, space grade solar cells, and excellent space engineers solar panels.
32% Triple Junction GaAs Solar Cell Assembly
This cell type is an GaInP2/GaAs/Ge on Ge substrate triple junction solar cell assembly (efficiency class 32%). The solar cell assembly is equipped with an discrete Si bypass diode, interconnectors and cover glass.
1. Design and Mechanical Data
Base Material |
GaInP2/GaAs/Ge on Ge substrate |
AR-coating |
TiOX/Al2O3 |
Dimensions |
(80.15±0.05)mm×(40.15±0.05)mm |
Cell Area |
24.00cm2 |
Weight |
2.025g |
Thickness |
0.161mm |
Coverglass |
KFB 120 |
Coverglass thickness |
120±20μm |
Interconnectors(3× front side/1× diode) |
Ag |
Interconnector thickness |
17μm |
2. Typical Electrical Parameters (SCA)
Average Open Circuit Voc (mV) |
2650 |
Average Short Circuit Jsc (mA/cm2) |
19.1 |
Voltage @ Max. PowerVm (mV) |
2350 |
Current @ Max. PowerJm (mA/cm2) |
18.45 |
Average Efficiency ηbare (1353W/m2) |
32% |
Average Fill Factor |
0.850 |
Standard：AM0, 1sun, 1353W/m2, 25℃.
3. Radiation Degradation ( Fluence 1MeV )
Parameters |
1×1015e/cm2 |
Im/Im0 |
0.95 |
Vm/Vm0 |
0.88 |
Pm/Pm0 |
0.84 |
4. Acceptance Values (SCA )
Voltage VL |
2200mV |
Min. average current IL min @ VL |
540mA |
Min. individual current IL ave @ VL |
520mA |
5. Shadow Protection(Discrete bypass diode)
Vforward(620mA) |
≤1.0V |
Ireverse(4.0V) |
≤0.2mA |
6. Temperature Coefficients (20℃～65℃)
Parameters |
BOL |
1 MeV, 5×1014e/cm2 |
1 MeV, 1×1015e/cm2 |
|
Jsc (μA/cm2/℃) |
11.0 |
10.0 |
13.0 |
|
Voc (mV/℃) |
-5.9 |
-6.1 |
-6.3 |
|
Jm (μA/cm2/℃) |
9.0 |
9.5 |
15.0 |
|
Vm (mV/℃) |
-6.0 |
-6.2 |
-6.5 |
7. Threshold Values
Absorptivity |
≤ 0.92 |
|
Pull Test(at 45°) |
≥0.83N/mm2 |
|
Status |
Qualified |
