30%TJ80SCA
YIM
| Quantity: | |
|---|---|
30% triple-junction GaAs solar cell(144mm*69mm)
The triple junction GaAs solar cell consists of a germanium (Ge) bottom cell, an indium gallium arsenic (InGaAs) middle cell and a gallium indium phosphorus (GaInP2) top cell connected in series, with an n/p cell structure.
Features:
Triple-junction GaAs Solar Array is consiste Triple-junction GaAs Solar Array or solar panels in a certain way of electrical assembly.Characteristics is high output power,high strong anti-radiation capacity,wide application range.
Typical photoelectric conversion efficiency is 30% and typical dimensions is 144.3mm x 68.5mm x 0.24mm.
Cover glass:
The cover glass is made of radiation resistant cover glass with MgF2 film vapour plated on the surface, the width of the edge defect of the MgF2 film due to tooling does not exceed 0.5 mm and the total area of the defect does not exceed 5% of the total area of the cover glass.
Typical dimensions of the cover glass is 144.45mm x 68.65mm x 0.12mm.
Bypass diodes:
Bypass diodes use silicon diodes.
In the absence of light and with an applied short-circuit current of 1.2Isc, the on-state voltage of the silicon diode is less than 1.0V.
In the absence of light and with an applied -4V reverse voltage, reverse leakage current of the silicon diode is less than 10μA
Typical dimensions are 17.3mm x 9.5mm x 0.19mm
Interconnecting pieces:
The interconnecting pieces are silver-plated interconnects with an outermost layer of silver, 30μm±5μm thick, of which the silver is not less than 99.95% pure.
The interconnecting piece has a strain relief ring which is intact and undamaged
Interconnecting piece stress relief rings tested to fatigue without fracture.
Typical dimension is 8.0mm x 6.5mm x 0.03mm.
Used for space solar system projects and space solar power systems, space grade solar cells, and excellent space engineers solar panels.
Applications
LEO,MEO,GEO and explorations of the spacecraft
Flight experience
satellites of SJ series ,satellites of GY series.
Each product we will provide a rigorous test report.
Specification
1. Design and Mechanical Data
Basic materials | GaInP2/GaAs/Ge on Ge substrate |
oxide layer | TiOX/Al2O3 |
size | 144.45mm×68.65mm |
Effective area | 80cm2 |
weight | 13.2±1.0g |
thickness | 0.40±0.05mm |
Glass cover plate | Irradiation resistant glass cover，120±20μm |
Interconnection strip | KOVAR，35μm |
Open circuit voltage Voc (mV) | 2780 |
Short circuit current density Jsc (mA/cm2) | 17.0 |
Optimal working point voltage Vm (mV) | 2470 |
Best operating point current Jm (mA/cm2) | 16.3 |
Conversion efficiency η (1353W/m2) | 30% |
2.TypicalElectricalParameters(SCA)
| Average Open Circuit Voc (mV) | 2780 |
| Average Short Circuit density Jsc (mA/cm) | 17.0 |
| Voltage@ Max. Power Vm (mV) | 2470 |
| Current density @ Max. Power Jm (mA/cm2) | 16.3 |
| Average Efficiency nbare (1353W/m2) | 30% |
FAQ:
Longer missions and higher payload demand accelerate radiation damage.
