English 
SC-3GA-1
YIM
| Quantity: | |
|---|---|
Technical Description SC-3GA-1-12
1. Design and Mechanical Data
Base Material | GaInP2/GaAs/Ge on Ge substrate |
AR-coating | TiOX/Al2O3 |
Dimensions | 40mm×30mm |
Cell Area | 12.00cm2 |
Weight | (145±12)mg/cm2 |
Thickness | 0.36±0.02mm |
Coverglass | KFB 120 |
Coverglass thickness | 120±20μm |
Interconnectors(2× front side/1× diode) | Ag |
Interconnector thickness | 17μm |
2. Typical Electrical Parameters (SCA)
Average Open Circuit Voc (mV) | 2630 |
Average Short Circuit Jsc (mA/cm2) | 17.0 |
Average Efficiency ηbare (1367W/m2) | 27.5% |
Average Fill Factor | 0.840 |
Standard：AM0, 1sun, 1353W/m2, 25℃.
3. Radiation Degradation ( Fluence 1MeV )
Parameters | 1×1014e/cm2 | 5×1014e/cm2 | 1×1015e/cm2 |
Im/Im0 | 0.99 | 0.96 | 0.92 |
Vm/Vm0 | 0.94 | 0.92 | 0.90 |
Pm/Pm0 | 0.93 | 0.88 | 0.83 |
4. Acceptance Values (SCA )
Voltage VL | 2200mV |
Min. average current IL min @ VL | 190mA |
Min. individual current IL ave @ VL | 170mA |
5. Shadow Protection(Integrated bypass diode)
Vforward(250mA) | ≤4.0V |
Ireverse(4.0V) | ≤1.0mA |
6. Temperature Coefficients (15℃～75℃)
Parameters | BOL | 1 MeV, 5×1014e/cm2 |
Jsc (uA/cm2/℃) | 5.0 | 6.0 |
Voc (mV/℃) | -6.4 | -6.8 |
7. Threshold Values
Absorptivity | ≤ 0.92 |
Emittance (Normal) | 0.84±0.02 |
Pull Test(at 45°) | ≥0.83N/mm2 |
Status | Qualified |
Technical Description SC-3GA-1-12
1. Design and Mechanical Data
Base Material | GaInP2/GaAs/Ge on Ge substrate |
AR-coating | TiOX/Al2O3 |
Dimensions | 40mm×30mm |
Cell Area | 12.00cm2 |
Weight | (145±12)mg/cm2 |
Thickness | 0.36±0.02mm |
Coverglass | KFB 120 |
Coverglass thickness | 120±20μm |
Interconnectors(2× front side/1× diode) | Ag |
Interconnector thickness | 17μm |
2. Typical Electrical Parameters (SCA)
Average Open Circuit Voc (mV) | 2630 |
Average Short Circuit Jsc (mA/cm2) | 17.0 |
Average Efficiency ηbare (1367W/m2) | 27.5% |
Average Fill Factor | 0.840 |
Standard：AM0, 1sun, 1353W/m2, 25℃.
3. Radiation Degradation ( Fluence 1MeV )
Parameters | 1×1014e/cm2 | 5×1014e/cm2 | 1×1015e/cm2 |
Im/Im0 | 0.99 | 0.96 | 0.92 |
Vm/Vm0 | 0.94 | 0.92 | 0.90 |
Pm/Pm0 | 0.93 | 0.88 | 0.83 |
4. Acceptance Values (SCA )
Voltage VL | 2200mV |
Min. average current IL min @ VL | 190mA |
Min. individual current IL ave @ VL | 170mA |
5. Shadow Protection(Integrated bypass diode)
Vforward(250mA) | ≤4.0V |
Ireverse(4.0V) | ≤1.0mA |
6. Temperature Coefficients (15℃～75℃)
Parameters | BOL | 1 MeV, 5×1014e/cm2 |
Jsc (uA/cm2/℃) | 5.0 | 6.0 |
Voc (mV/℃) | -6.4 | -6.8 |
7. Threshold Values
Absorptivity | ≤ 0.92 |
Emittance (Normal) | 0.84±0.02 |
Pull Test(at 45°) | ≥0.83N/mm2 |
Status | Qualified |
