SC-3GA-3
YIM
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triple-junction GaAs solar cell
The triple junction GaAs solar cell consists of a germanium (Ge) bottom cell, an indium gallium arsenic (InGaAs) middle cell and a gallium indium phosphorus (GaInP2) top cell connected in series, with an n/p cell structure.
Typical photoelectric conversion efficiency is 30% and typical dimensions is 80.0mm x 40.0mm x 0.155mm.
Cover glass
The cover glass is made of radiation resistant cover glass with MgF2 film vapour plated on the surface, the width of the edge defect of the MgF2 film due to tooling does not exceed 0.5 mm and the total area of the defect does not exceed 5% of the total area of the cover glass.
Typical dimensions of the cover glass is 80.15mm x 40.15mm x 0.12mm.
Bypass diodes
Bypass diodes use silicon diodes.
In the absence of light and with an applied short-circuit current of 1.2Isc, the on-state voltage of the silicon diode is less than 1.0V.
In the absence of light and with an applied -4V reverse voltage, reverse leakage current of the silicon diode is less than 10μA
Typical dimensions are 10.0mm x 10.0mm x 0.17mm
Interconnecting pieces
The interconnecting pieces are silver-plated interconnects with an outermost layer of silver, 30μm±5μm thickness, of which the silver is not less than 99.95% pure.
The interconnecting piece has a strain relief ring which is intact and undamaged
Interconnecting piece stress relief rings tested to fatigue without fracture.
Typical dimension is 8.0mm x 6.5mm x 0.03mm.
1. Design and Mechanical Data
Base Material | GaInP2/GaAs/Ge on Ge substrate |
AR-coating | TiOX/Al2O3 |
Dimensions | （80.15mm±0.1mm）×（40.15mm±0.1mm） |
Cell Area | 30.15cm2 |
Weight | (125±12)mg/cm2 |
Thickness | 0.30mm±0.05mm |
Coverglass | KFB 120 |
Coverglass thickness | 120±20μm |
Interconnectors | Kovar, silver coated |
Interconnector thickness | 35μm |
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2.
Typical Electrical Parameters (SCA)
Average Open Circuit Voc (mV) | 2740 |
Average Short Circuit Jsc (mA/cm2) | 17.3 |
Voltage @ Max. PowerVm (mV) | 2430 |
Current @ Max. PowerJm (mA/cm2) | 16.6 |
Average Efficiency ηbare (1353W/m2) | 30% |
3. Radiation Degradation ( Fluence 1MeV )
Parameters | 1×1014e/cm2 | 5×1014e/cm2 | 1×1015e/cm2 |
Im/Im0 | 0.98 | 0.96 | 0.93 |
Vm/Vm0 | 0.96 | 0.92 | 0.90 |
Pm/Pm0 | 0.94 | 0.88 | 0.84 |
4. Acceptance Values (SCA )
Voltage VL | 2300mV |
Min. average current IL min @ VL | 500mA |
Min. individual current IL ave @ VL | 480mA |
5. Shadow Protection(Discrete bypass diode)
Vforward(620mA) | ≤1.0V |
Ireverse(4.0V) | ≤0.2mA |
6. Temperature Coefficients (20℃～65℃)
Parameters | BOL | 1 MeV, 5×1014e/cm2 | 1 MeV, 1×1015e/cm2 |
Jsc (μA/cm2/℃) | 11.0 | 10.0 | 13.0 |
Voc (mV/℃) | -5.9 | -6.1 | -6.3 |
Jm (μA/cm2/℃) | 9.0 | 9.5 | 15.0 |
Vm (mV/℃) | -6.0 | -6.2 | -6.5 |
7. Threshold Values
Absorptivity | ≤ 0.92 |
Pull Test(at 45°) | ≥0.83N/mm2 |
Status | Qualified |
IV Test Standard：AM0, 1sun, 1353W/m2, 25℃.
triple-junction GaAs solar cell
The triple junction GaAs solar cell consists of a germanium (Ge) bottom cell, an indium gallium arsenic (InGaAs) middle cell and a gallium indium phosphorus (GaInP2) top cell connected in series, with an n/p cell structure.
Typical photoelectric conversion efficiency is 30% and typical dimensions is 80.0mm x 40.0mm x 0.155mm.
Cover glass
The cover glass is made of radiation resistant cover glass with MgF2 film vapour plated on the surface, the width of the edge defect of the MgF2 film due to tooling does not exceed 0.5 mm and the total area of the defect does not exceed 5% of the total area of the cover glass.
Typical dimensions of the cover glass is 80.15mm x 40.15mm x 0.12mm.
Bypass diodes
Bypass diodes use silicon diodes.
In the absence of light and with an applied short-circuit current of 1.2Isc, the on-state voltage of the silicon diode is less than 1.0V.
In the absence of light and with an applied -4V reverse voltage, reverse leakage current of the silicon diode is less than 10μA
Typical dimensions are 10.0mm x 10.0mm x 0.17mm
Interconnecting pieces
The interconnecting pieces are silver-plated interconnects with an outermost layer of silver, 30μm±5μm thickness, of which the silver is not less than 99.95% pure.
The interconnecting piece has a strain relief ring which is intact and undamaged
Interconnecting piece stress relief rings tested to fatigue without fracture.
Typical dimension is 8.0mm x 6.5mm x 0.03mm.
1. Design and Mechanical Data
Base Material | GaInP2/GaAs/Ge on Ge substrate |
AR-coating | TiOX/Al2O3 |
Dimensions | （80.15mm±0.1mm）×（40.15mm±0.1mm） |
Cell Area | 30.15cm2 |
Weight | (125±12)mg/cm2 |
Thickness | 0.30mm±0.05mm |
Coverglass | KFB 120 |
Coverglass thickness | 120±20μm |
Interconnectors | Kovar, silver coated |
Interconnector thickness | 35μm |
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2.
Typical Electrical Parameters (SCA)
Average Open Circuit Voc (mV) | 2740 |
Average Short Circuit Jsc (mA/cm2) | 17.3 |
Voltage @ Max. PowerVm (mV) | 2430 |
Current @ Max. PowerJm (mA/cm2) | 16.6 |
Average Efficiency ηbare (1353W/m2) | 30% |
3. Radiation Degradation ( Fluence 1MeV )
Parameters | 1×1014e/cm2 | 5×1014e/cm2 | 1×1015e/cm2 |
Im/Im0 | 0.98 | 0.96 | 0.93 |
Vm/Vm0 | 0.96 | 0.92 | 0.90 |
Pm/Pm0 | 0.94 | 0.88 | 0.84 |
4. Acceptance Values (SCA )
Voltage VL | 2300mV |
Min. average current IL min @ VL | 500mA |
Min. individual current IL ave @ VL | 480mA |
5. Shadow Protection(Discrete bypass diode)
Vforward(620mA) | ≤1.0V |
Ireverse(4.0V) | ≤0.2mA |
6. Temperature Coefficients (20℃～65℃)
Parameters | BOL | 1 MeV, 5×1014e/cm2 | 1 MeV, 1×1015e/cm2 |
Jsc (μA/cm2/℃) | 11.0 | 10.0 | 13.0 |
Voc (mV/℃) | -5.9 | -6.1 | -6.3 |
Jm (μA/cm2/℃) | 9.0 | 9.5 | 15.0 |
Vm (mV/℃) | -6.0 | -6.2 | -6.5 |
7. Threshold Values
Absorptivity | ≤ 0.92 |
Pull Test(at 45°) | ≥0.83N/mm2 |
Status | Qualified |
IV Test Standard：AM0, 1sun, 1353W/m2, 25℃.
